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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3299 DESCRIPTION With TO-220Fa package Complement to type 2SA1307 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage Emitter-base voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 60 50 5 5 1 UNIT V V V A A Open base Open collector TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 20 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA , IB=0 IC=3A; IB=0.15A IC=3A; IB=0.15A VCB=50V ;IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=3A ; VCE=1V IE=0 ; VCB=10V,f=1MHz IC=1A ; VCE=4V 70 30 80 MIN 50 2SC3299 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V 0.4 1.2 1.0 1.0 240 |I |I V V A A pF MHz Switching times ton ts tf Fall time Turn-on time Storage time INC O E SEM ANG H IC=3A ;IB1=0.15A IB2=-0.15A,VCC=30V RL=10| OND IC TOR UC 120 0.1 1.0 0.1 |I |I |I s s s hFE-1 Classifications Y 120-240 70-140 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3299 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3299 CHA IN E SEM NG OND IC TOR UC 4 |
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